Functional components for SiC semiconductor manufacturing
Components for single crystal growth and CVD that can handle SiC processes above 2000℃. Electrostatic chucks compatible with sputtering and ion implantation at high temperatures.
Momentive's "Tantalum Carbide Coating" has a proven track record as a component in SiC single crystal growth furnaces and epitaxial equipment, while the "Electrostatic Chuck" is used in high-temperature ion implantation and sputtering processes for Si and SiC semiconductor processes. 【Features】 ■ Tantalum Carbide - Usable at ultra-high temperatures (over 2000°C) - Excellent coating capability that accommodates complex shapes ■ Electrostatic Chuck - Compatible with processes up to 1000°C - High design flexibility according to specifications *For more details, please refer to the catalog. Feel free to contact us with any inquiries.
- Company：モメンティブ・テクノロジーズ・ジャパン
- Price：Other
